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APT20GT60KR
600V 40A
Thunderbolt IGBTTM
TO-220
The Thunderbolt is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM offers superior ruggedness and ultrafast switching speed.
IGBTTM
* Low Forward Voltage Drop * Low Tail Current * Avalanche Rated
MAXIMUM RATINGS
Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
* High Freq. Switching to 150KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated
G
C
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT20GT60KR UNIT
600
RY A IN
MIN
Collector-Gate Voltage (RGE = 20K) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current Pulsed Collector Current
1 1
600 15 20 40 20 80 40 40 175 -55 to 150 300
Volts
Amps
@ TC = 25C @ TC = 110C
2
M
Single Pulse Avalanche Energy Total Power Dissipation
mJ Watts C
Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Symbol BVCES RBVCES VGE(TH) VCE(ON)
Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 500A, Tj = 25C)
PR
STATIC ELECTRICAL CHARACTERISTICS
EL I
TYP
MAX
UNIT
600 -15 3 1.6 4 2.0 5 2.5 2.8 40 1000 100
A nA
052-6203 Rev B
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)
I CES I GES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
APT Website - http://www.advancedpower.com
Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20GT60KR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.50VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 10 I C = I C2 MIN TYP MAX UNIT
1100 110 65 95 40 8 10 34 115 125 15 15 190 30 0.55 0.45 1.00
mJ ns ns nC pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
IM EL
Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 TJ = +150C
Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
PR
IN
A
RY
4
MIN
Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 TJ = +25C VCE = 20V, I C = I C2
15 18 160 25 0.60
mJ S ns
Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
THERMAL CHARACTERISTICS
Symbol RJC RJA Torque
1 2 3
Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
TYP
MAX
UNIT C/W lb*in
0.72 80 10
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25, L = 200H, Tj = 25C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6203 Rev B

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